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Silicon Carbide Mosfets Market
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Silicon Carbide Mosfets Market

Author: Chandra Mohan - Sr. Industry Consultant, Report ID - DS1201028, Published - January 2025

Segmented in Product Type (Depletion Mode, Enhancement Mode), Power Rating (Low Power, High Power), Application, End-User and Regions - Global Industry Analysis, Size, Share, Trends, and Forecast 2024 – 2034

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Global Silicon Carbide Mosfets Market Outlook

Leading the progress of power electronics is Silicon carbide (Si C ) MOS FET s, which are quietly causing a stir in industries. The market, for Silicon carbide mosfets was estimated at $5.6 billion in 2024. It is anticipated to increase to $27.4 billion by 2030 with projections indicating a growth to around $102.9 billion by 2035. This expansion represents a compound annual growth rate (CAGR) of 30.3% over the forecast period. These innovative devices can function effectively at temperatures and frequencies revolutionizing a wide range of applications such as electric vehicle chargers and solar energy systems. Leveraging the characteristics of silicon carbide MOS FET s are paving the way for substantial advancements in technology unveiling the possibility of significant market expansion, in the near future.


Exploring the world of Silicon Carbide MOS transistors reveals a semiconductor device known for its exceptional efficiency and impressive thermal resilience.


Market Size Forecast & Key Insights

2019
$5.6B2024
2029
$79B2034

Absolute Growth Opportunity = $73.4B

The Silicon Carbide Mosfets market is projected to grow from $5.6 billion in 2024 to $79.0 billion in 2034. This represents a CAGR of 30.3%, reflecting rising demand across Power Electronics in Electric Vehicles, Power Supplies in Data Centres and Photovoltaic Solar Power Systems.

The Silicon Carbide Mosfets market is set to add $73.4 billion between 2024 and 2034, with manufacturer targeting Automotive & Industrial Application projected to gain a larger market share.

With Increasing demand for renewable energy, and Rising adoption in electric vehicles , Silicon Carbide Mosfets market to expand 1311% between 2024 and 2034.

Opportunities in the Silicon Carbide Mosfets Market

Industrial Automation

Recent advancements in industrial automation technologies are anticipated to demand efficient and reliable semiconductor devices in the near future Silicon Carbide MOSFs could cater to this need with their lower heat dissipation and quick switch capabilities These features make them ideal for high frequency tasks, in automated industrial equipment

Electric Vehicle Revolution and Rise of Renewables

The rise of vehicles worldwide presents a bright outlook for Silicon Carbide MOS FETs given their widespread application in power electronics for EVs. Their capacity to enable effective and compact designs is vital for the success of electric vehicles. With an increasing number of car manufacturers committing to transitioning their fleets to power there is anticipated growth in the demand, for Silicon Carbide MOS FETs.

The increasing focus worldwide towards energy represents a significant factor driving the growth of Silicon Carbide MOSFETs as well. These electronic components are well suited for converting power in panels and wind turbines because of their capacity to operate effectively at elevated temperatures and their exceptional energy efficiency characteristics. This makes them an essential component, in enhancing the performance of renewable energy systems.

Growth Opportunities in North America and Europe

Europe Outlook

In Europe's market for Silicon Carbide MOSFEts is booming due to the growth of the renewable energy industry there. Given the goals for carbon neutrality in place bSilicon Carbide MOSFEts are commonly employed in wind and solar power converters. There is competition among major players in the region striving to innovate and produce MOSFEts that are both more effective and affordable resultinig in ample chances, for market growth.

North America Outlook

In North America the market for Silicon Carbide MOSFEts faces competition from established manufacturers and technological progressions. The growth of this market in the region is fueled by the rising need for energy saving devices in industries, like automotive and electronics. Additionally government efforts to promote energy are also boosting the usage of Silicon Carbide MOSFEts.

North America Outlook

In North America the market for Silicon Carbide MOSFEts faces competition from established manufacturers and technological progressions. The growth of this market in the region is fueled by the rising need for energy saving devices in industries, like automotive and electronics. Additionally government efforts to promote energy are also boosting the usage of Silicon Carbide MOSFEts.

Europe Outlook

In Europe's market for Silicon Carbide MOSFEts is booming due to the growth of the renewable energy industry there. Given the goals for carbon neutrality in place bSilicon Carbide MOSFEts are commonly employed in wind and solar power converters. There is competition among major players in the region striving to innovate and produce MOSFEts that are both more effective and affordable resultinig in ample chances, for market growth.

Growth Opportunities in North America and Europe

Established and Emerging Market's Growth Trend 2025–2034

1

Major Markets : United States, China, Japan, Germany, South Korea are expected to grow at 29.1% to 42.4% CAGR

2

Emerging Markets : India, United Arab Emirates, Mexico are expected to grow at 22.7% to 31.5% CAGR

Market Analysis Chart

The market for Silicon carbide (SiS MOSFIET transistors is greatly impacted by factors driving the market forward One major factor is the increasing need for SiS MOSFIET transistors in industries like telecommunications energy sectors due to their advantages such, as high voltage efficiency and rapid switching abilities Another key driver is the growing use of electric vehicles where SiS MOSFIET transistors play a vital role in onboard charging systems and fast chargers for these vehicles

Recent Developments and Technological Advancement

December 2024

Cree Inc increased their production capacity by establishing a facility for manufacturing silicon carbide in response, to growing market demand.

October 2024

Infineon Technologies revealed that they are incorporating silicon carbide MOSRFET technology, in energy projects to enhance energy efficiency.

August 2024

STMicroelectronics has just introduced a line of silicon carbide MOS transistors that aim to boost energy efficiency during conversion processes.

Lately there have been notable advancements in the market for Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors . This progress is mainly due to the evolution in the semiconductor industry and the growing need, for energy efficiency and heat resistance while aiming for smaller electronic devices.

Impact of Industry Transitions on the Silicon Carbide Mosfets Market

As a core segment of the Semiconductor industry, the Silicon Carbide Mosfets market develops in line with broader industry shifts. Over recent years, transitions such as Transition Towards Electric Vehicles and Demand Surge in Renewable Energy Sector have redefined priorities across the Semiconductor sector, influencing how the Silicon Carbide Mosfets market evolves in terms of demand, applications and competitive dynamics. These transitions highlight the structural changes shaping long-term growth opportunities.

1

Transition Towards Electric Vehicles:

The Silicon carbide MOSFET market is experiencing a shift due to the expanding electric vehicleindustry'srapid development. Silicon carbide components are gaining traction in vehicles for their effectiveness in managing elevated temperatures and voltages which helps enhance battery longevity and streamline power control in the vehicles. These devices boast improved efficiency leading to reduced energy usage and substantial cost savings. An appealing prospect, for car manufacturers.

2

Demand Surge in Renewable Energy Sector:

The increasing need for Silicon carbide MOS Field Effect Transistors in the market is being driven by the growing demand in energy industries, like solar and wind power systems.

Global Events Shaping Future Growth

The chart below highlights how external events including emerging market developments, regulatory changes, and technological disruptions, have added another layer of complexity to the Semiconductor industry. These events have disrupted supply networks, changed consumption behavior, and reshaped growth patterns. Together with structural industry transitions, they demonstrate how changes within the Semiconductor industry cascade into the Silicon Carbide Mosfets market, setting the stage for its future growth trajectory.

Market Dynamics and Supply Chain

Driver: Increasing Demand for Renewable Energy, and Advancements in Power Electronics

The increasing worries about the environment and the worldwide shift towards energy sources have also caused a rise in the need for Silicon Carbide . MOSMOSMOSEFs are also now in demand because they offer excellent effectiveness and stable performance, under high temperatures especially in solar power inverters and wind energy setups.
In years there has also been a rise in the demand for SiCMOS transistors due to their enhanced efficiency, smaller size and superior performance in power electronics applications. Their ability to handle voltage levels achieve greater power density and operate at improved switching frequencies has also made them increasingly popular, in various power devices and circuits.
The growing electric vehicle sector is also also a factor boosting the demand for SiCMOSFEts in the market. These components provide energy efficiency which translates to extended battery life for electric vehicles making them a popular option, for EV producers worldwide.

Restraint: High Manufacturing Cost

Silicon carbide MOS transistors are quite a technology but they do come with a steep price tag attached to them for sure! The materials and manufacturing costs make it tough for many businesses to afford these devices in the market as a whole expenditure is required to get hold of them fully functional and working well enough as intended by the manufacturers themselves! Moreover the manufacturing process of these Silicon carbide MOS transistors is quite complex in nature which further adds up to the cost of production making it even more challenging, for the market growth as companies struggle to keep up with the costs involved therein!

Challenge: Technological Complexity

Designing and producing silicon carbide MOSFEts is quite a task that demands a high degree of technical know how and experience to execute successfully. Many semiconductor firms face difficulties when it comes to creating SiCMOSFEts due, to the nature of the processes and methods involved.

Supply Chain Landscape

Raw Material Procurement

Cree Wolfspeed

Yicheng New Energy

Silicon Carbide Crystal Production

Norstel

Tianyu Semiconductor

Silicon Carbide MOSFETs Manufacturing
STMicroelectronics / Infineon
End Use Applications
Solar Inverters / High-voltage DC networks / Automotive drive systems
Raw Material Procurement

Cree Wolfspeed

Yicheng New Energy

Silicon Carbide Crystal Production

Norstel

Tianyu Semiconductor

Silicon Carbide MOSFETs Manufacturing

STMicroelectronics

Infineon

End Use Applications

Solar Inverters

High-voltage DC networks

Automotive drive systems

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Leading Providers and Their Strategies

Application AreaIndustryLeading ProvidersProvider Strategies
Photovoltaic Systems
Renewable Energy
Infineon Technologies
Focus on developing durable and energy-efficient silicon carbide MOSFETs to cater to the rising demand for sustainable energy sources
Electric Vehicles
Automotive
STMicroelectronics
Leverage the compactness and superior thermal characteristics of silicon carbide MOSFETs to create EV power modules that boast higher energy efficiency and reduced slowing
Power Supply Applications
Electronics
Cree Inc.
Forge next-generation power designs by capitalizing on the high-voltage capacity and lower conduction losses of silicon carbide MOSFETs
Industrial Motor Drives
Manufacturing & Industrial
Texas Instruments
Engineer high-performance silicon carbide MOSFETs to streamline power management in heavy-duty industrial systems

Elevate your strategic vision with in-depth analysis of key applications, leading market players, and their strategies. The report analyzes industry leaders' views and statements on the Silicon Carbide Mosfets market's present and future growth.

Our research is created following strict editorial standards. See our Editorial Policy

Applications of Silicon Carbide Mosfets in Power Supplies in Data Centres, Photovoltaic Solar Power Systems and Power Electronics in Electric Vehicles

Power Supplies in Data Centres

The use of electricity in data centers worldwide is steadily rising, leading to the adoption of silicon carbide MOSFEts in power supply units to better handle the increasing power requirements, with enhanced efficiency and effectiveness.

Photovoltaic Solar Power Systems

The transition towards energy sources is seeing Silicon carbide MOSFEts take center stage in enhancing photovoltaic solar power systems efficiency and performance while lowering costs significantly compared to traditional silicon based components by managing high voltages and temperatures more efficiently in solar inverters. Solar industry giants, like SolarEdge and SMA Solar Technology are leveraging Silicon carbide MOSFEts to revolutionize efficiency boundaries.

Power Electronics in Electric Vehicles

Silicon carbide MOS sets are commonly used in the power components of cars for functions like storing energy and controlling motors and charging units which significantly decrease power wastage leading to improved effectiveness and longer battery lifespan. Tesla stands out as a player incorporating Silicon carbide MOS sets, in their electric vehicle designs that help achieve impressive mileage and performance standards in the industry.

Silicon Carbide Mosfets vs. Substitutes:
Performance and Positioning Analysis

Silicon carbide MOS FET transistors provide efficiency and thermal performance while reducing system costs compared to alternative options like IGBT or standard silicon MOS FET transistors. They are specifically targeted for high end power applications with growth potential ahead, in the market.

Silicon Carbide Mosfets
  • Gallium Nitride FETs /
  • Insulated Gate Bipolar Transistors
    High thermal conductivity, low switching losses
    Costly, limited availability
    Robust performance in high temperature and high voltage conditions, superior power density
    High manufacturing costs, complexities in design and integration

Silicon Carbide Mosfets vs. Substitutes:
Performance and Positioning Analysis

Silicon Carbide Mosfets

  • High thermal conductivity, low switching losses
  • Costly, limited availability

Gallium Nitride FETs / Insulated Gate Bipolar Transistors / Traditional Silicon MOSFETs

  • Robust performance in high temperature and high voltage conditions, superior power density
  • High manufacturing costs, complexities in design and integration

Silicon carbide MOS FET transistors provide efficiency and thermal performance while reducing system costs compared to alternative options like IGBT or standard silicon MOS FET transistors. They are specifically targeted for high end power applications with growth potential ahead, in the market.

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Research Methodology

This market research methodology defines the Silicon Carbide Mosfets market scope, gathers reliable data, and validates findings using integrated primary and secondary research. Our systematic framework ensures precise market sizing, growth trend analysis, and competitive benchmarking.


Secondary Research Approach


We begin secondary research by defining the targeted market at macro and micro levels. As part of the Semiconductor ecosystem, we analyze Silicon Carbide Mosfets across OEMs and Aftermarket Applications. Our team gathers data systematically from country level ministerial sources, industry associations & federations, trade databases, company annual & quarterly reports and other credential sources, enabling us to map global and regional market size, pricing trends, regulatory standards, and technology advancements.



Key Sources Referenced:


We benchmark competitors such as Infineon Technologies AG, STMicroelectronics, and Cree Inc. (Wolfspeed) by reviewing company financial statements, and regulatory filings. Our secondary insights identify key market drivers and constraints, forming the analytical foundation for primary research.


Primary Research Methods


We conduct structured interviews and surveys with industry stakeholders, including Raw Material Procurement, Silicon Carbide Crystal Production, and Silicon Carbide MOSFETs Manufacturing. Our geographic coverage spans Americas (40%), Europe (30%), Asia-Pacific (25%) and Middle East & Africa (5%). Our online surveys generally achieve a response rate of above 65%, and telephone interviews yield 60%, resulting in above 92% confidence level with a ±7% margin of error.


Through targeted questionnaires and in-depth interviews, we capture purchase intent, adoption barriers, brand perception across Segment Type. We use interview guides to ensure consistency and anonymous survey options to mitigate response bias. These primary insights validate secondary findings and align market sizing with real-world conditions.


Market Engineering & Data Analysis Framework


Our data analysis framework integrates Top-Down, Bottom-Up, and Company Market Share approaches to estimate and project market size with precision.


Top-down & Bottom-Up Process


In Top-down approach, we disaggregate global Semiconductor revenues to estimate the Silicon Carbide Mosfets segment, using historical growth patterns to set baseline trends. Simultaneously, in Bottom-up approach, we aggregate Country-Level Demand Data to derive regional and global forecasts, which provide granular consumption insights. By reconciling both approaches, we ensure statistical precision and cross-validation accuracy.


We evaluate the supply chain, spanning Raw Material Procurement (Cree Wolfspeed, Yicheng New Energy), Silicon Carbide Crystal Production (Norstel, Tianyu Semiconductor), and Silicon Carbide MOSFETs Manufacturing. Our parallel substitute analysis examines Gallium Nitride FETs, Insulated Gate Bipolar Transistors, and Traditional Silicon MOSFETs, highlighting diversification opportunities and competitive risks.


Company Market Share & Benchmarking


We benchmark leading companies such as Infineon Technologies AG, STMicroelectronics, and Cree Inc. (Wolfspeed), analyzing their capabilities in pricing, product features, technology adoption, and distribution reach. By assessing company-level revenues and product portfolios, we derive market share comparisons, clarifying competitive positioning and growth trajectories across the ecosystem.


Our integration of data triangulation, supply chain evaluation, and company benchmarking, supported by our proprietary Directional Superposition methodology enables us to deliver precise forecasts and actionable strategic insights into the Silicon Carbide Mosfets market.


Quality Assurance and Compliance


We cross-reference secondary data with primary inputs and external expert reviews to confirm consistency. Further, we use stratified sampling, anonymous surveys, third-party interviews, and time-based sampling to reduce bias and strengthen our results.


Our methodology is developed in alignment with ISO 20252 standards and ICC/ESOMAR guidelines for research ethics. The study methodology follows globally recognized frameworks such as ISO 20252 and ICC codes of practice.

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Silicon Carbide Mosfets Market Data: Size, Segmentation & Growth Forecast

Report AttributeDetails
Market Value in 2025USD 7.3 billion
Revenue Forecast in 2034USD 79.0 billion
Growth RateCAGR of 30.3% from 2025 to 2034
Base Year for Estimation2024
Industry Revenue 20245.6 billion
Growth OpportunityUSD 73.4 billion
Historical Data2019 - 2023
Growth Projection / Forecast Period2025 - 2034
Market Size UnitsMarket Revenue in USD billion and Industry Statistics
Market Size 20245.6 billion USD
Market Size 202712.4 billion USD
Market Size 202921.0 billion USD
Market Size 203027.4 billion USD
Market Size 203479.0 billion USD
Market Size 2035102 billion USD
Report CoverageMarket revenue for past 5 years and forecast for future 10 years, Competitive Analysis & Company Market Share, Strategic Insights & trends
Segments CoveredProduct Type, Power Rating, Application, End-User
Regional scopeNorth America, Europe, Asia Pacific, Latin America and Middle East & Africa
Country scopeU.S., Canada, Mexico, UK, Germany, France, Italy, Spain, China, India, Japan, South Korea, Brazil, Mexico, Argentina, Saudi Arabia, UAE and South Africa
Companies ProfiledInfineon Technologies AG, STMicroelectronics, Cree Inc. (Wolfspeed), ROHM Semiconductor, United Silicon Carbide Inc, Toshiba Corporation, NXP Semiconductors, ON Semiconductor, Littelfuse Inc, GeneSiC Semiconductor Inc, Vishay Intertechnology Inc and Texas Instruments Inc
CustomizationFree customization at segment, region or country scope and direct contact with report analyst team for 10 to 20 working hours for any additional niche requirement which is almost equivalent to 10% of report value

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Table of Contents

Industry Insights Report - Table Of Contents

Chapter 1

Executive Summary

Major Markets & Their Performance - Statistical Snapshots

Chapter 2

Research Methodology

2.1Axioms & Postulates
2.2Market Introduction & Research MethodologyEstimation & Forecast Parameters / Major Databases & Sources
Chapter 3

Market Dynamics

3.1Market OverviewDrivers / Restraints / Opportunities / M4 Factors
3.2Market Trends
3.2.1Introduction & Narratives
3.2.2Market Trends - Impact Analysis(Short, Medium & Long Term Impacts)
3.3Supply Chain Analysis
3.4Porter's Five ForcesSuppliers & Buyers' Bargaining Power, Threat of Substitution & New Market Entrants, Competitive Rivalry
Chapter 4

Silicon Carbide Mosfets Market Size, Opportunities & Strategic Insights, by Product Type

4.1Depletion Mode
4.2Enhancement Mode
Chapter 5

Silicon Carbide Mosfets Market Size, Opportunities & Strategic Insights, by Power Rating

5.1Low Power
5.2High Power
Chapter 6

Silicon Carbide Mosfets Market Size, Opportunities & Strategic Insights, by Application

6.1Consumer Electronics
6.2Automotive
6.3Industrial
6.4Aerospace&Defense
Chapter 7

Silicon Carbide Mosfets Market Size, Opportunities & Strategic Insights, by End-User

7.1OEMs
7.2Aftermarket
Chapter 8

Silicon Carbide Mosfets Market, by Region

8.1North America Silicon Carbide Mosfets Market Size, Opportunities, Key Trends & Strategic Insights
8.1.1U.S.
8.1.2Canada
8.2Europe Silicon Carbide Mosfets Market Size, Opportunities, Key Trends & Strategic Insights
8.2.1Germany
8.2.2France
8.2.3UK
8.2.4Italy
8.2.5The Netherlands
8.2.6Rest of EU
8.3Asia Pacific Silicon Carbide Mosfets Market Size, Opportunities, Key Trends & Strategic Insights
8.3.1China
8.3.2Japan
8.3.3South Korea
8.3.4India
8.3.5Australia
8.3.6Thailand
8.3.7Rest of APAC
8.4Middle East & Africa Silicon Carbide Mosfets Market Size, Opportunities, Key Trends & Strategic Insights
8.4.1Saudi Arabia
8.4.2United Arab Emirates
8.4.3South Africa
8.4.4Rest of MEA
8.5Latin America Silicon Carbide Mosfets Market Size, Opportunities, Key Trends & Strategic Insights
8.5.1Brazil
8.5.2Mexico
8.5.3Rest of LA
8.6CIS Silicon Carbide Mosfets Market Size, Opportunities, Key Trends & Strategic Insights
8.6.1Russia
8.6.2Rest of CIS
Chapter 9

Competitive Landscape

9.1Competitive Dashboard & Market Share Analysis
9.2Company Profiles (Overview, Financials, Developments, SWOT)
9.2.1Infineon Technologies AG
9.2.2STMicroelectronics
9.2.3Cree Inc. (Wolfspeed)
9.2.4ROHM Semiconductor
9.2.5United Silicon Carbide Inc
9.2.6Toshiba Corporation
9.2.7NXP Semiconductors
9.2.8ON Semiconductor
9.2.9Littelfuse Inc
9.2.10GeneSiC Semiconductor Inc
9.2.11Vishay Intertechnology Inc
9.2.12Texas Instruments Inc