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Gallium Nitride Fet Market
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Gallium Nitride Fet Market

Author: Chandra Mohan - Sr. Industry Consultant, Report ID - DS1201032, Published - January 2025

Segmented in Technology Type (High-electron-mobility transistors (HEMTs), Schottky diode), Application (Radio Frequency Devices, Power Electronics), Industry Vertical, Product Type and Regions - Global Industry Analysis, Size, Share, Trends, and Forecast 2024 – 2034

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Global Gallium Nitride Fet Market Outlook

Gallium Nitride Field Effect Transistors (GaN FETs) have significantly impacted the electronics industry with their game changing capabilities that are reshaping the future of power electronics due to their energy efficiency and improved performance features leading to an extended operational lifespan. The market, for Gallium nitride fet was estimated at $14.1 billion in 2024. It is anticipated to increase to $23.3 billion by 2030 with projections indicating a growth to around $35.3 billion by 2035. This expansion represents a compound annual growth rate (CAGR) of 8.7% over the forecast period. This innovation is seen as a solution, to the increasing energy demand challenges ahead and underscores the vital role GaNFETs play in shaping the global landscape of power technology.


Undoubtedly GaNFET stands out as being superior when compared to silicon equivalents due to its ability to function at elevated temperatures and voltage levels while boasting power densities—all of which solidify its dominance, in high power and high frequency applications.


Market Size Forecast & Key Insights

2019
$14.1B2024
2029
$32.5B2034

Absolute Growth Opportunity = $18.4B

The Gallium Nitride Fet market is projected to grow from $14.1 billion in 2024 to $32.5 billion in 2034. This represents a CAGR of 8.7%, reflecting rising demand across Power Supply Systems, Electric Vehicles (EVs) and Hybrids and Wireless Infrastructure.

The Gallium Nitride Fet market is set to add $18.4 billion between 2024 and 2034, with manufacturer targeting Power Electronics & undefined Application projected to gain a larger market share.

With Surge in electric vehicles, and Advancements in wireless infrastructure, Gallium Nitride Fet market to expand 130% between 2024 and 2034.

Opportunities in the Gallium Nitride Fet Market

Advancements in Consumer Electronics

In the consumer electronics sector wellThere'sa notable focus on enhancing energy efficiency and making devices smaller in size – both contributing to substantial growth, in this area.

Renewable Energy Revolution and Emergence in Electric Vehicles

Gallium Nitride FETs have been making a difference in the renewable energy industry due to their ability to improve energy efficiency significantly. These components energy saving capabilities make them a top pick for equipment such, as inverters or wind power converters that are gaining popularity as the worlds interest in renewable energy grows stronger.

There'sa potential to explore in the electric vehicle sector with Gallium Nitride FET technology as it can handle voltages and temperatures well suited for EV charging stations. Their capacity to switch at increased frequencies might result in compact and efficient power converters for EVs potentially bringing about changes, in this expanding industry.

Growth Opportunities in North America and Europe

Europe Outlook

The GaNFET market in Europe is primarily driven by the defense industry. Supported by the growing demand in consumer electronics sectors. This market is more diverse than North America's market as it has players operating at different levels. However the potential utilization of GaNFET in energy systems offers unexplored prospects, in this region.

North America Outlook

In North America the market for Gallium Nitride FET is expanding steadily due to progress in the telecommunication and automotive sectors mainly driving it forward; the industry sees an environment spurred by technological advancements and the prominent role of key market players. Despite this competition there are chances for growth in the energy field where GaNFET finds use, in power conversion systems.

North America Outlook

In North America the market for Gallium Nitride FET is expanding steadily due to progress in the telecommunication and automotive sectors mainly driving it forward; the industry sees an environment spurred by technological advancements and the prominent role of key market players. Despite this competition there are chances for growth in the energy field where GaNFET finds use, in power conversion systems.

Europe Outlook

The GaNFET market in Europe is primarily driven by the defense industry. Supported by the growing demand in consumer electronics sectors. This market is more diverse than North America's market as it has players operating at different levels. However the potential utilization of GaNFET in energy systems offers unexplored prospects, in this region.

Growth Opportunities in North America and Europe

Established and Emerging Market's Growth Trend 2025–2034

1

Major Markets : United States, China, Japan, Germany, South Korea are expected to grow at 6.4% to 9.1% CAGR

2

Emerging Markets : Brazil, Nigeria, Vietnam are expected to grow at 8.4% to 10.9% CAGR

Market Analysis Chart

The rise in popularity of Gallium Nitride Field effect Transistors has been remarkable due to their outstanding performance features when compared to silicon based transistors. These characteristics comprise a power density and efficient energy conversion along with a notable breakdown strength and high operating frequency making GaM FETs the preferred choice, for power semiconductors across various applications ranging from power electronics to radio frequency devices.

Recent Developments and Technological Advancement

December 2024

Cree Inc made a stride in improving the durability and efficiency of its Gallium Nitride FET products. A notable step forward, in the industry.

October 2024

The latest products, from Qorvo Inc include a series of Gallium Nitride FET devices designed to improve heat dissipation by utilizing the advanced thermal capabilities of these semiconductors.

August 2024

Infineon Technologies AG has started expanding production to solidify its position, as a provider of high power Gallium Nitride FET technology to meet the increasing worldwide demand.

Innovations in Gallium Nitride based Field Effect Transistors have opened up possibilities and obstacles in the field Were seeing a growing interest, in GaNFET technology because of its improved power efficiency quick switching times and compact size when compared to traditional silicon based options.

Impact of Industry Transitions on the Gallium Nitride Fet Market

As a core segment of the Semiconductor industry, the Gallium Nitride Fet market develops in line with broader industry shifts. Over recent years, transitions such as Rise in Electric Vehicles Production and Technological Advancements in the Telecom Industry have redefined priorities across the Semiconductor sector, influencing how the Gallium Nitride Fet market evolves in terms of demand, applications and competitive dynamics. These transitions highlight the structural changes shaping long-term growth opportunities.

1

Rise in Electric Vehicles Production:

The increase in electric vehicle manufacturing has had an impact on the Gallium Nitride FET market as GaNFET technology provides enhanced power density and efficiency along with better thermal performance which is essential for electric vehicle parts like inverters leading to improved vehicle efficiency as well, as size and weight reduction of the inverter system contributing to the overall growth of the industry.

2

Technological Advancements in the Telecom Industry:

The telecom sectors technological progress is reshaping the GaNFET market with the rise of 5th generation technology renowned for its enhanced data speeds and device connectivity features that bear implications.

Global Events Shaping Future Growth

The chart below highlights how external events including emerging market developments, regulatory changes, and technological disruptions, have added another layer of complexity to the Semiconductor industry. These events have disrupted supply networks, changed consumption behavior, and reshaped growth patterns. Together with structural industry transitions, they demonstrate how changes within the Semiconductor industry cascade into the Gallium Nitride Fet market, setting the stage for its future growth trajectory.

Market Dynamics and Supply Chain

Driver: Surge in Electric Vehicles, and Rising Demand for Consumer Electronics

The worldwide shift towards eco friendly energy sources has also led to a rise in the popularity of electric cars. To meet this growing need for space saving power solutions in the automotive industry Gallium Nitride FET technology has also emerged as a key player due to its impressive features, like exceptional frequency capabilities, power density levels and overall efficiency standards.
Using Gallium Nitride FET technology plays a role, in making consumer electronics smaller and more energy efficient.
In the era of transitioning to the interconnected 5th generation network system globally requires cutting edge semiconductor devices of functioning effectively at elevated frequencies with minimal resistance and high power output levels. Gallium Nitride FET devices fulfill this need and play a pivotal role in enhancing the infrastructure for 5th generation technologies by meeting the rising demand, for them.

Restraint: High Production Costs

The process of creating Gallium Nitride FET components requires methods and advanced technologies which can result in higher production expenses; this leads to GaNFETs being priced higher, than silicon based equivalents. Many sectors might choose affordable options because of financial limitations reducing the potential expansion and market acceptance of GaNFET technology.

Challenge: Limited Technological Understanding

Gallium Nitride FET is an addition to the semiconductor field, with plenty of untapped potential waiting to be explored and shared widely with the industry stakeholders at large. The limited grasp of the materials physics and the shortage of trained technical workforce are key barriers hindering the swift adoption of GaNFET technology.

Supply Chain Landscape

Raw Material Procurement

Sumitomo Electric Industries

Nitride Solutions

Wafer Production

Toshiba

Mitsubishi Chemical

FET Production
Infineon Technologies / Texas Instruments
Final Products & Applications
General Electric / Qorvo
Raw Material Procurement

Sumitomo Electric Industries

Nitride Solutions

Wafer Production

Toshiba

Mitsubishi Chemical

FET Production

Infineon Technologies

Texas Instruments

Final Products & Applications

General Electric

Qorvo

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Leading Providers and Their Strategies

Application AreaIndustryLeading ProvidersProvider Strategies
RF Power Amplification
Telecommunications
Qorvo, NXP Semiconductors
Developing robust GaN FETs for high-frequency, high-power applications, investing in R&D for product enhancement
Switch Mode Power Supply
Consumer Electronics
Texas Instruments, Infineon Technologies
Building compact and energy-efficient GaN FETs for smoother power management, adapting products according to evolving market trends
Electric Vehicles
Automotive
Transphorm, EPC
Creating durable and high-performance GaN FETs for EV battery management and traction inverters, focusing on product innovation to enhance energy efficiency
Wireless Data Transmission
IT & Networking
Broadcom, Qualcomm
Investing in GaN FETs for efficient high-frequency data transmission in wireless network devices, focusing on technology integration and diversification to cater to the rising demand

Elevate your strategic vision with in-depth analysis of key applications, leading market players, and their strategies. The report analyzes industry leaders' views and statements on the Gallium Nitride Fet market's present and future growth.

Our research is created following strict editorial standards. See our Editorial Policy

Applications of Gallium Nitride Fet in Electric Vehicles (EVs) and Hybrids, Power Supply Systems and Wireless Infrastructure

Electric Vehicles (EVs) and Hybrids

Gallium Nitride FET usage is on the rise, in the sector. It is being increasingly adopted for developing power electronics in vehicles and hybrid vehicles.

Power Supply Systems

Gallium Nitride FET technology is widely employed in power systems for its power efficiency and fast switching abilities while managing heat effectively too! GaNs stand out in power supplies as they can work at frequencies without losing efficiency much. A boon for designers aiming to shrink down size and weight requirements effectively! Key industry players, like Cree and Texas Instruments have made commitments to GaNs for their power supply offerings.

Wireless Infrastructure

In fields that require frequency and high power radio frequency applications. Like telecommunications and satellite communication base stations. Gallium Nitride FETs are crucial components due to their ability to handle high voltages while maintaining a high power density and reliable performance levels that result in more compact and efficient base stations being built using them by leading companies such, as Qorvo and Infineon holding significant market shares in this industry segment.

Gallium Nitride Fet vs. Substitutes:
Performance and Positioning Analysis

Gallium Nitride FETs outperform alternatives by offering superior power efficiency, frequency capacity, and thermal stability. Their unique market positioning lies in the rapid adoption in power electronics and potential growth in EV and 5G infrastructure domains

Gallium Nitride Fet
  • Silicon Carbide MOSFETs /
  • Lateral double diffused MOSFET /
  • Silicon MOSFET
    High electron mobility, superior thermal stability
    High production cost, complex fabrication process
    High conductivity, faster switching speed
    Higher production costs, sensitivity to temperature fluctuations

Gallium Nitride Fet vs. Substitutes:
Performance and Positioning Analysis

Gallium Nitride Fet

  • High electron mobility, superior thermal stability
  • High production cost, complex fabrication process

Silicon Carbide MOSFETs / Lateral double diffused MOSFET / Silicon MOSFET

  • High conductivity, faster switching speed
  • Higher production costs, sensitivity to temperature fluctuations

Gallium Nitride FETs outperform alternatives by offering superior power efficiency, frequency capacity, and thermal stability. Their unique market positioning lies in the rapid adoption in power electronics and potential growth in EV and 5G infrastructure domains

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Research Methodology

This market research methodology defines the Gallium Nitride Fet market scope, gathers reliable data, and validates findings using integrated primary and secondary research. Our systematic framework ensures precise market sizing, growth trend analysis, and competitive benchmarking.


Secondary Research Approach


We begin secondary research by defining the targeted market at macro and micro levels. As part of the Semiconductor ecosystem, we analyze Gallium Nitride Fet across Radio Frequency Devices and Power Electronics Applications. Our team gathers data systematically from country level ministerial sources, industry associations & federations, trade databases, company annual & quarterly reports and other credential sources, enabling us to map global and regional market size, pricing trends, regulatory standards, and technology advancements.



Key Sources Referenced:


We benchmark competitors such as Qorvo Inc, Cree Inc, and Nexperia by reviewing company financial statements, and regulatory filings. Our secondary insights identify key market drivers and constraints, forming the analytical foundation for primary research.


Primary Research Methods


We conduct structured interviews and surveys with industry stakeholders, including Raw Material Procurement, Wafer Production, and FET Production. Our geographic coverage spans Americas (40%), Europe (30%), Asia-Pacific (25%) and Middle East & Africa (5%). Our online surveys generally achieve a response rate of above 65%, and telephone interviews yield 60%, resulting in above 92% confidence level with a ±7% margin of error.


Through targeted questionnaires and in-depth interviews, we capture purchase intent, adoption barriers, brand perception across Segment Type. We use interview guides to ensure consistency and anonymous survey options to mitigate response bias. These primary insights validate secondary findings and align market sizing with real-world conditions.


Market Engineering & Data Analysis Framework


Our data analysis framework integrates Top-Down, Bottom-Up, and Company Market Share approaches to estimate and project market size with precision.


Top-down & Bottom-Up Process


In Top-down approach, we disaggregate global Semiconductor revenues to estimate the Gallium Nitride Fet segment, using historical growth patterns to set baseline trends. Simultaneously, in Bottom-up approach, we aggregate Country-Level Demand Data to derive regional and global forecasts, which provide granular consumption insights. By reconciling both approaches, we ensure statistical precision and cross-validation accuracy.


We evaluate the supply chain, spanning Raw Material Procurement (Sumitomo Electric Industries, Nitride Solutions), Wafer Production (Toshiba, Mitsubishi Chemical), and FET Production. Our parallel substitute analysis examines Silicon Carbide MOSFETs, Lateral double diffused MOSFET, and Silicon MOSFET, highlighting diversification opportunities and competitive risks.


Company Market Share & Benchmarking


We benchmark leading companies such as Qorvo Inc, Cree Inc, and Nexperia, analyzing their capabilities in pricing, product features, technology adoption, and distribution reach. By assessing company-level revenues and product portfolios, we derive market share comparisons, clarifying competitive positioning and growth trajectories across the ecosystem.


Our integration of data triangulation, supply chain evaluation, and company benchmarking, supported by our proprietary Directional Superposition methodology enables us to deliver precise forecasts and actionable strategic insights into the Gallium Nitride Fet market.


Quality Assurance and Compliance


We cross-reference secondary data with primary inputs and external expert reviews to confirm consistency. Further, we use stratified sampling, anonymous surveys, third-party interviews, and time-based sampling to reduce bias and strengthen our results.


Our methodology is developed in alignment with ISO 20252 standards and ICC/ESOMAR guidelines for research ethics. The study methodology follows globally recognized frameworks such as ISO 20252 and ICC codes of practice.

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Gallium Nitride Fet Market Data: Size, Segmentation & Growth Forecast

Report AttributeDetails
Market Value in 2025USD 15.3 billion
Revenue Forecast in 2034USD 32.5 billion
Growth RateCAGR of 8.7% from 2025 to 2034
Base Year for Estimation2024
Industry Revenue 202414.1 billion
Growth OpportunityUSD 18.4 billion
Historical Data2019 - 2023
Growth Projection / Forecast Period2025 - 2034
Market Size UnitsMarket Revenue in USD billion and Industry Statistics
Market Size 202414.1 billion USD
Market Size 202718.1 billion USD
Market Size 202921.4 billion USD
Market Size 203023.3 billion USD
Market Size 203432.5 billion USD
Market Size 203535.3 billion USD
Report CoverageMarket revenue for past 5 years and forecast for future 10 years, Competitive Analysis & Company Market Share, Strategic Insights & trends
Segments CoveredTechnology Type, Application, Industry Vertical, Product Type
Regional scopeNorth America, Europe, Asia Pacific, Latin America and Middle East & Africa
Country scopeU.S., Canada, Mexico, UK, Germany, France, Italy, Spain, China, India, Japan, South Korea, Brazil, Mexico, Argentina, Saudi Arabia, UAE and South Africa
Companies ProfiledQorvo Inc, Cree Inc, Nexperia, Infineon Technologies AG, Analog Devices Inc, MACOM, GaN Systems Inc, Transphorm Inc, Panasonic Corporation, ROHM Semiconductor, Efficient Power Conversion Corporation and Broadcom Ltd
CustomizationFree customization at segment, region or country scope and direct contact with report analyst team for 10 to 20 working hours for any additional niche requirement which is almost equivalent to 10% of report value

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Table of Contents

Industry Insights Report - Table Of Contents

Chapter 1

Executive Summary

Major Markets & Their Performance - Statistical Snapshots

Chapter 2

Research Methodology

2.1Axioms & Postulates
2.2Market Introduction & Research MethodologyEstimation & Forecast Parameters / Major Databases & Sources
Chapter 3

Market Dynamics

3.1Market OverviewDrivers / Restraints / Opportunities / M4 Factors
3.2Market Trends
3.2.1Introduction & Narratives
3.2.2Market Trends - Impact Analysis(Short, Medium & Long Term Impacts)
3.3Supply Chain Analysis
3.4Porter's Five ForcesSuppliers & Buyers' Bargaining Power, Threat of Substitution & New Market Entrants, Competitive Rivalry
Chapter 4

Gallium Nitride Fet Market Size, Opportunities & Strategic Insights, by Technology Type

4.1High-electron-mobility transistors (HEMTs)
4.2Schottky diode
Chapter 5

Gallium Nitride Fet Market Size, Opportunities & Strategic Insights, by Application

5.1Radio Frequency Devices
5.2Power Electronics
Chapter 6

Gallium Nitride Fet Market Size, Opportunities & Strategic Insights, by Industry Vertical

6.1Telecommunication
6.2Automotive
6.3Consumer Electronics
Chapter 7

Gallium Nitride Fet Market Size, Opportunities & Strategic Insights, by Product Type

7.1Discrete
7.2Die
Chapter 8

Gallium Nitride Fet Market, by Region

8.1North America Gallium Nitride Fet Market Size, Opportunities, Key Trends & Strategic Insights
8.1.1U.S.
8.1.2Canada
8.2Europe Gallium Nitride Fet Market Size, Opportunities, Key Trends & Strategic Insights
8.2.1Germany
8.2.2France
8.2.3UK
8.2.4Italy
8.2.5The Netherlands
8.2.6Rest of EU
8.3Asia Pacific Gallium Nitride Fet Market Size, Opportunities, Key Trends & Strategic Insights
8.3.1China
8.3.2Japan
8.3.3South Korea
8.3.4India
8.3.5Australia
8.3.6Thailand
8.3.7Rest of APAC
8.4Middle East & Africa Gallium Nitride Fet Market Size, Opportunities, Key Trends & Strategic Insights
8.4.1Saudi Arabia
8.4.2United Arab Emirates
8.4.3South Africa
8.4.4Rest of MEA
8.5Latin America Gallium Nitride Fet Market Size, Opportunities, Key Trends & Strategic Insights
8.5.1Brazil
8.5.2Mexico
8.5.3Rest of LA
8.6CIS Gallium Nitride Fet Market Size, Opportunities, Key Trends & Strategic Insights
8.6.1Russia
8.6.2Rest of CIS
Chapter 9

Competitive Landscape

9.1Competitive Dashboard & Market Share Analysis
9.2Company Profiles (Overview, Financials, Developments, SWOT)
9.2.1Qorvo Inc
9.2.2Cree Inc
9.2.3Nexperia
9.2.4Infineon Technologies AG
9.2.5Analog Devices Inc
9.2.6MACOM
9.2.7GaN Systems Inc
9.2.8Transphorm Inc
9.2.9Panasonic Corporation
9.2.10ROHM Semiconductor
9.2.11Efficient Power Conversion Corporation
9.2.12Broadcom Ltd